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一个新的6500V SiC沟沟MOSFET,配有集成的单极二极管,用于改进第三象限和切换特性

Hao Wu¹, Xuan Li¹, Xiaochuan Deng¹

¹State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

|January 23, 2024

概括

这项研究引入了一种新的6500V碳化 (SiC) MOSFET与集成的单极二极管 (UD-MOS),以增强反向导和减少开关损失. 新型设计显著提高了高压直流应用的性能.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

碳化 (SiC) MOSFET对于高功率应用至关重要.
提高反向导电特性和减少切换损失是关键的挑战.
在传统的SiC设备中,双极性降解仍然是一个问题.

研究的目的:

提出一个新的6500VSiC沟沟MOSFET,配备一个集成的单极二极管 (UD-MOS).
为了增强反向导电特性和抑制双极性降解.
为了减少开关损失,提高设备效率.

主要方法:

在SiC沟MOSFET结构中集成单极二极管 (UD-MOS).
在沟模拟门下实施N型基地区域.
反导电压 (V_ON),反回收电荷 (Q_RR) 和电容 (C_GD,C_GS) 的表征.

主要成果:

降低了反导电压 (V_ON) 到1.11V.
显著降低反向回收电荷 (Q_RR) 到1.22μC/cm2.
降低了门到排水 (C_GD) 和门到源 (C_GS) 容量,改善了切换损失.
证明了与损失相关的优秀功绩 (FOM).

结论:

拟议的UD-MOS有效地改善了反向导通,并抑制了双极性降解.
降低容量导致更低的切换损失,提高整体效率.
开发的SiC MOSFET原型显示了基于电压源转换器的高压直流 (HVDC) 应用的显著性能优势.

关键词:

在SiC沟MOSFET中使用.双极性退化退化是双极性退化.集成的单极二极管.低的开关损失低的开关损失

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