相关实验视频

Updated: Jul 5, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

一个新的DTSCR结构,具有28nmCMOS技术ESD保护的高持电压和增强的电流放电能力

Zeen Han¹, Shupeng Chen¹, Hongxia Liu¹

¹Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, China.

|January 23, 2024

概括

一个新的二极管触发控制整流器与额外的放电路径 (EDP-DTSCR) 增强静电放电 (ESD) 在28纳米CMOS技术的保护. 这种改进的设备提供了更好的电流放电能力和高级电子产品的优越触发特性.

科学领域:

电气工程电气工程
半导体设备物理半导体设备物理
微电子学微电子学

背景情况:

28纳米CMOS技术中的缩小设计窗口需要先进的静电放电 (ESD) 保护解决方案.
传统的ESD保护设备在处理增加的电流密度和保持性能方面存在局限性.

研究的目的:

提出和评估一种新型二极管触发控制的整流器,具有额外的放电路径 (EDP-DTSCR),以加强ESD保护.
与现有设备相比,改进当前放电能力,触发和保持特性.

主要方法:

开发EDP-DTSCR结构,在主SCR路径旁边设有并行SCR路径的奴隶SCR路径.
使用 TCAD 模拟来分析设备性能,包括启动电阻和触发/保持电压.
与传统的DTSCR和PGR-DTSCR设备进行比较分析.

主要成果:

拟议的EDP-DTSCR显示了由于额外的平行放电路径,显著提高了当前的放电能力.
与传统的DTSCR和PGR-DTSCR相比,TCAD模拟显示了显著较低的电阻.
结构优化导致持有电压增加和触发电压降低,改善抗锁能力.

结论:

对于28纳米CMOS技术的严格要求,EDP-DTSCR提供了优质的ESD保护解决方案.
这种新的设计有效地解决了传统ESD保护装置的局限性.
改进的性能特性使其非常适合用于先进的集成电路应用.

关键词:

在 DTSCR 中,您可以使用 DTSCR.当前的放电情况.静电放电 (ESD) 保护保护保持电压的保持电压.

更多相关视频

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Author Spotlight: Microfluidic Channel-Based Soft Electrodes and Their Application in Capacitive Pressure Sensing

Author Spotlight: Microfluidic Channel-Based Soft Electrodes and Their Application in Capacitive Pressure Sensing

Published on: March 17, 2023

相关概念视频

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...