相关实验视频

Updated: Jul 11, 2026

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies
08:21

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

Published on: March 20, 2015

12.4K

对先进的双面冷却翻转芯片包装与石材料进行模拟,用于氧化设备

He Guan1, Dong Wang1, Wentao Li1

  • 1School of Microelectronics, Northwestern Polytechnical University, Xi'an 710129, China.

Micromachines
|January 23, 2024
PubMed
概括

先进的双面冷却包装显著改善了氧化 (Ga2O3) 设备的热管理. 这种创新的翻转芯片设计增强了散热,使要求更高的应用程序具有更高的功率密度.

关键词:
翻转芯片包装的包装氧化的氧化.热模拟的热模拟

更多相关视频

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.2K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...