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在剥落的Fe_5-GeTe₂中写入和检测拓电荷

Alex Moon^1,2, Yue Li³, Conor McKeever⁴

¹National High Magnetic Field Laboratory, 1800 E. Paul Dirac Dr., Tallahassee, Florida 32310, United States.

|January 23, 2024

概括

厚度调节的Fe5GeTe2 2D vdW磁铁表现出放大异常霍尔效应 (AHE) 和拓霍尔效应 (THE). 30nm的"神奇"厚度最大限度地优化了旋转电子应用的拓旋转纹理 (TST).

科学领域:

凝聚物质物理学凝聚物质物理学
材料科学材料科学材料科学
这就是Spintronics.

背景情况:

像Fe5GeTe2这样的二维 (2D) 范德瓦尔斯 (vdW) 磁铁由于室温铁磁力学和拓旋转纹理 (TST) 对自旋电子有希望.
异常霍尔效应 (AHE) 和拓霍尔效应 (THE) 是与TST相关的关键现象,为先进的电子设备提供了途径.

研究的目的:

为了研究厚度对磁性质的影响和相关的霍尔效应在去皮的Fe5GeTe2.2.
确定最佳厚度,以最大限度地提高TST形成,并增强AHE和THE用于旋转子应用.

主要方法:

脱皮Fe5GeTe2薄膜. 薄膜的脱皮方法.
电子运输测量以量化AHE和TH.
洛伦兹传输电子显微镜和微磁模拟用于研究TST和磁相互作用.

主要成果:

厚度变化显著放大了Fe5GeTe2.2中的AHE和THE.
确定了大约30nm的"神奇"厚度,最大限度地提高了TST的形成,并导致创纪录的高拓电荷密度.
异常的异常 (ρA,max 22.6 μΩ cm) 和拓 (ρu,T 15 μΩ cm) 霍尔电阻的异常大小在120 K时得到了实现.
即使在零磁场中也观察到THE,这归因于场诱导的拓电荷不平衡.

结论:

厚度工程是一种强大的策略,可以在2D vdW磁铁中增强AHE和THE.
观察到的零场THE和最大化的TST在~30纳米厚度提供了一个新的平台,用于节能的自旋电子设备.
在特定厚度的Fe5GeTe2与磁性拓绝缘体和其他2D磁体相比,具有优越的性能,为实际的自旋电子应用铺平了道路.

关键词:

不正常的霍尔效应梅隆斯 (meronsons) 是一个名字.斯基尔米昂斯斯基尔米昂斯拓学的霍尔效应拓学费用是指拓学费用.

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