旋转轨道扭矩和磁化切换 (Bi,Sb) 2Te3/Fe3GeTe2 异构结构由分子束Epitaxy生长
Thomas Guillet1, Regina Galceran1, Juan F Sierra1
1Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain.
Nano letters
|January 24, 2024
概括
我们开发了一种可扩展的方法,用于创建德瓦尔斯异构结构,将拓绝缘体和2D铁磁体结合起来. 这种方法显著减少了设备的变化,并提高了用于磁性操纵的旋转轨道扭矩效率.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 拓绝缘器 (TI) 提供了通过旋转轨道扭矩 (SOT) 操纵铁磁 (FM) 磁化的潜力.
- 与传统FM集成IT面临诸如设备可变性和不一致的SOT大小等挑战.
研究的目的:
- 提出一种可扩展的方法来制造范德瓦尔斯 (vdW) FM/TI异构结构.
- 研究这些新型异构结构中的SOT效率和磁化切换.
主要方法:
- 利用分子束表 (MBE) 来培养电荷补偿TI (Bi,Sb) 2Te3和2D FM Fe3GeTe2 (FGT) 的异构结构.
- 采用波磁传输测量来描述SOT的效率.
- 研究了FGT厚度对2个单层的影响.
主要成果:
- 实现了VDW FM/TI异构结构制造的可扩展方法.
- 观察到SOT效率的非单调的温度依赖.
- 通过减少FGT厚度 (2个单层) 证明了大量的SOT增强.
- 展示了在~10^10 A/m^2.2的电流密度下超薄FGT薄膜的磁化开关.
- 与传统的FM集成相比,报告的设备间差异很小.
结论:
- 在MBE中培养的vdW异构结构为高效的基于SOT的自旋电子设备提供了一个有前途的平台.
- 减少设备变化和提高SOT效率为实际应用铺平了道路.
- 在二维磁性异构结构中对厚度依赖的SOT进行进一步研究是有必要的.
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