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Updated: Jul 5, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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隐藏的声子高速公路在扭曲的过渡金属二二原体异构结构中促进光诱导的介层能量转移

Amalya C Johnson1, Johnathan D Georgaras1, Xiaozhe Shen2

  • 1Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA.

Science advances
|January 24, 2024
PubMed
概括

垂直堆叠的范德瓦尔斯异构结构表现出独特的特性,但弱的接口合限制了热传输. 这项研究揭示了这些二维材料中比预期更快的传热通道.

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High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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