在原子层沉积的Hf-doped In2O3薄膜晶体管中通过氧气空隙调制实现可调性性能
Jiyuan Zhu1, Shen Hu1,2, Bojia Chen1
1School of Microelectronics, Fudan University, Shanghai 200433, China.
The Journal of chemical physics
|January 25, 2024
概括
化处理通过减少氧气空缺,显著改善了氧化 (In2O3) 薄膜晶体管的电特性. 在250°C达到最佳性能,表现出增强的门控制和电气特性.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 半导体设备物理 半导体设备物理
背景情况:
- 氧化 (In2O3) 具有高电子度,限制了其半导体性能.
- 预处理是必要的,以优化In2O3用于半导体应用.
研究的目的:
- 调查化对In2O3薄膜和晶体管的影响.
- 了解化如何影响微观结构,光学特性和氧气空缺.
- 为了优化In2O3薄膜晶体管 (TFT) 以提高电气性能.
主要方法:
- 对In2O3薄膜的各种回火处理进行了系统的研究.
- 对微观结构变化,光学特性 (透射率,带隙) 和氧空隙度的分析.
- 用Hf添加剂的In2O3 TFT的制造和电气特性.
主要成果:
- 化促进In2O3薄膜的结晶,温度升高增强了这种效果.
- 较高的回火温度降低了氧气空隙度,增加了光学传导率和带隙.
- 化器件显示出更好的门控制和电气性能,在250°C时获得最佳效果.
结论:
- 热温度有效调节氧气空缺,从而控制In2O3.3的电性质.
- 在250°C时炼的Hf-doped In2O3 TFT获得了卓越的性能 (移动性:18.65 cm2/V·s,SS:0.18 V/dec,离子/Ioff:2.76 × 106).
- 这项研究为在实际的氧化膜应用中使用回火工艺提供了可靠的参考.
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