在WSe2/AlScN FeFET中通过接触工程调节极性
Kwan-Ho Kim1, Seunguk Song1, Bumho Kim2
1Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
ACS nano
|January 25, 2024
概括
这项研究展示了使用2D WSe2和AlScN.的新型p型和双极铁电场效应晶体管 (FeFETs). 接触工程使所有三种FeFET类型成为可能,扩大了对非挥发性存储器件的应用.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 电气工程 电气工程
背景情况:
- 带有2D半导体通道和AlScN铁电的铁电场效应晶体管 (FeFET) 显示出对非易失性内存的前景.
- 以前的研究只关注n型FeFET,限制了设备的多功能性.
研究的目的:
- 开发和演示使用2D WSe2和AlScN的n型,p型和双极FeFET.
- 探索接触工程在FeFETs载体类型调制中的作用.
- 为了在这些新的FeFET设备中实现高性能指标.
主要方法:
- 使用AlScN和多层/单层WSe2.2制造阵列规模的FeFET.
- 在金属半导体接口的接触工程控制载体注入.
- 技术计算机辅助设计 (TCAD) 模拟来分析接触效应.
主要成果:
- 成功证明了n型,p型和双极FeFETs的存在.
- 实现了高电子和孔电流密度 (约. 它们分别为20和10μA/μm).
- 显示了高的开/关比 (>10^7) 和一个大的内存窗口 (>6V).
结论:
- 接触工程是一种可行的方法,可以实现各种FeFET特性 (n型,p型,双极).
- 2D WSe2/AlScN FeFET为非挥发性内存和逻辑应用提供了出色的性能.
- 这项工作弥合了p型和双极FeFET的差距,使得电路集成的范围更广.
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