绘制下一代光子学的路线图
Sudip Shekhar1, Wim Bogaerts2, Lukas Chrostowski3
1Department of Electrical & Computer Engineering, University of British Columbia, 2332 Main Mall, Vancouver, V6T1Z4, BC, Canada. sudip@ece.ubc.ca.
Nature communications
|January 25, 2024
概括
光子技术正在扩展到超越数据中心的传感和计算领域. 克服整合和制造方面的挑战是达到数十亿单位的关键,并使下一代应用程序成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 光电学是指光电子产品.
背景情况:
- 光子已经成熟成为主流技术,主要是由于光通信的进步.
- 当前的集成光子设备,特别是数据中心的通信收发器,已经从数千到数百万个单位扩散.
- 传感和计算领域的新兴应用有望实现显著增长.
研究的目的:
- 探索光子学的未来轨迹,旨在实现数十亿单位的运输规模.
- 确定阻碍更广泛应用的扩散的关键集成和制造瓶.
- 概述下一代光子学和支持技术的特点.
主要方法:
- 分析光子学的几代趋势,与CMOS技术扩展进行并行分析.
- 确定CMOS-foundry兼容设备,电路,集成和包装中的关键挑战.
- 审查新兴技术及其解决当前局限性的潜力.
主要成果:
- 光子技术在扩大生产规模以使其在当前市场之外得到广泛采用方面面临重大障碍.
- 下一代光子学需要在设备设计,电路集成和包装解决方案方面取得进展.
- 新兴技术为克服制造和整合瓶提供了潜在的解决方案.
结论:
- 实现数十亿单位的出货需要解决光子制造和集成的根本挑战.
- 未来的光子系统可能将集成通信,信号处理和传感的先进功能.
- 进一步的研究和开发对于推进光子生态系统和释放其全部潜力至关重要.
相关概念视频
Semiconductors
703
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
703
Types of Semiconductors
604
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
604


