开发一种动态气锁抑制模型,用于EUV诱导的碳沉积
Ming Hao1, Shuai Teng1, Jiaxing Liu2
1School of Mechanical Engineering and Automation, Northeastern University, Shenyang, China.
The Journal of chemical physics
|January 29, 2024
概括
极紫外线 (EUV) 刻画中的碳化合物污染会导致碳沉积. 这项研究模拟了沉积,发现光子诱导裂变是关键,缓解涉及更高的温度和更轻的碳化合物.
科学领域:
- 半导体制造业 半导体制造业
- 材料科学是一种材料科学.
- 摄影化学的使用.
背景情况:
- 极端紫外线 (EUV) 石版对于先进的半导体制造至关重要.
- 光学表面的碳化合物污染导致碳沉积,降低了光刻性能.
- 现有的模型往往忽视了动态气体锁 (DGL) 对碳沉积的影响.
研究的目的:
- 为了研究碳化合物吸附,脱附和裂变在EUV光刻,考虑DGL效应.
- 开发一个关于碳沉积的综合数学模型.
- 分析辐射强度,温度和碳化合物类型对沉积速度的影响.
主要方法:
- 开发一个全面的碳沉积数学模型.
- 模拟碳化合物吸附,脱附和裂变动态.
- 分析包括EUV辐射强度,温度和碳化合物成分在内的因素.
主要成果:
- 碳化合物的直接裂变由EUV光子 (12.514.5nm) 被确定为碳沉积的主要原因.
- 碳沉积率随着高EUV强度 (>50mW/mm2) 的清洁气体流量增加而呈指数级下降.
- 在低EUV强度下,清洁气体流对沉积率的影响最小.
结论:
- 提高光学表面温度和使用轻碳化合物有效减轻碳沉积.
- 了解DGL的影响对于准确的碳沉积建模至关重要.
- 优化工艺参数可以显著提高EUV石版的产量和质量.
相关概念视频
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