在铁磁多层中调节界面Dzyaloshinskii-Moriya相互作用
Yufei Meng1, Fei Meng1, Mingxuan Hou1
1School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
概括
接口Dzyaloshinskii-Moriya相互作用 (i-DMI) 稳定了磁膜中的螺旋结构,如磁膜中的 skyrmions. 调节i-DMI对于低功率的自旋电子设备和拓物理学的关键.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 界面Dzyaloshinskii-Moriya相互作用 (i-DMI) 在缺乏反向对称的膜中发生.
- i-DMI 稳定非线性自旋结构,包括 Néel 类型的域壁,磁性 skyrmions 和自旋螺旋.
- 这些自旋结构的特性是由i-DMI的强度和性决定的.
研究的目的:
- 审查对铁磁膜中i-DMI调节的研究进展.
- 突出控制i-DMI的科学意义和实际价值.
- 为这个领域提供未来的研究前景.
主要方法:
- 本综述综合了关于i-DMI监管的现有研究.
- 专注于涉及铁磁膜的研究.
- 分析i-DMI如何影响旋转结构动态.
主要成果:
- i-DMI对于稳定和控制性旋转结构至关重要.
- 旋转结构的动态行为与i-DMI特性直接相关.
- 对i-DMI的监管为先进的旋转电子应用提供了途径.
结论:
- 控制i-DMI对于基本的自旋电子学和拓物理学至关重要.
- 对于低功耗内存,逻辑和神经形态设备来说,i-DMI 调节具有显著的潜力.
- 鼓励对下一代技术进行i-DMI监管的进一步研究.
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