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一项关于P2-NaMnO2结构稳定性起源的Ab Initio研究,使用高电压的Li兴奋剂

Heejung Kim1, Kyoo Kim2, Sooran Kim3

  • 1Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang 37673, Korea.

The journal of physical chemistry letters
|January 29, 2024
PubMed
概括

替代稳定P2型阴极材料,防止有害的相位过渡. 建议使用至少20%的离子进行兴奋剂,以提高离子电池的循环性能.

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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