在GeC/CrS2/GeC范德瓦尔斯异构结构中的外平面压力和电子兴奋剂诱导相和磁性过渡
Kaiyun Chen1, Xue Yan2, Junkai Deng3
1Advanced Materials Research Central, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China.
Nanoscale
|January 30, 2024
概括
将压力和电子兴奋剂应用于GeC/CrS2/GeC范德瓦尔斯异构结构,从而诱导相位和磁转换. 这使得可编程的2D横向铁磁/反铁磁异构结构能够为旋转器件创建.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 范德瓦尔斯材料表现出受层间相互作用影响的调节性质.
- 外平面压力和电子兴奋剂是影响这些相互作用的关键因素.
- 像CrS2这样的磁性二维材料对自旋电子应用具有前景.
研究的目的:
- 研究应变和电子兴奋剂对GeC/CrS2/GeC范德瓦尔斯异构结构的影响.
- 探索CrS2层中相位和磁性转换的诱导.
- 评估创建可调节的2D横向铁磁/反铁磁异构结构的潜力.
主要方法:
- 使用密度函数理论 (DFT) 的计算.
- 模拟了一个GeC/CrS2/GeC三层范德瓦尔斯异构结构.
- 系统地应用了外平面应变和电子兴奋剂.
主要成果:
- 外平面应变和电子兴奋剂诱导了CrS2.2.中的1T'-to-1T相变.
- 这种相位过渡伴随着铁磁 (FM) 到反铁磁 (AFM) 的磁性过渡.
- 电子兴奋剂显著降低了FM到AFM过渡所需的临界压缩应力.
结论:
- 该研究展示了一种通过外部刺激控制2D材料中的磁相转换的方法.
- 可以制造可调的2D横向FM/AFM异构结构.
- 这些发现为开发人工自旋纹理和微型自旋电子设备提供了途径.
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