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一个基于有机晶体的浮门场效应晶体管存储器,内置道介电器,通过一步增长策略来实现

Zichen Chen¹, Shuai Chen¹, Tianhao Jiang¹

¹Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China. xjzhang@suda.edu.cn.

|January 31, 2024

概括

一种新的液体表面阻力涂层方法可以创建灵活的浮式门有机场效应晶体管 (FG-OFET) 存储器设备. 这种技术产生了高性能有机内存,具有出色的数据保留和多级别存储能力.

科学领域:

材料科学材料科学材料科学
有机电子有机电子
纳米技术纳米技术

背景情况:

浮式门有机场效应晶体管 (FG-OFET) 存储器由于其存储机制和数据保留,为非挥发性存储提供了潜在的潜力.
传统的FG-OFET在制造复杂性和机械灵活性方面存在局限性,这阻碍了实际应用.

研究的目的:

为高性能灵活的FG-OFET内存设备开发一个简单的制造策略.
研究使用新型涂层技术制造的FG-OFET内存设备的性能特性.

主要方法:

采用一阶段的液体表面阻抗涂层策略,创建了由2,8-二-5,11-bis ((三乙) 乙烯) 晶体 (Dif-TES-ADT) 和聚乙烯 (PS) 的分层结构.
液体表面促进了有机晶体的扩散和单向生长,形成了FG-OFET记忆装置的双层混合物.

主要成果:

实现了一种灵活的FG-OFET内存设备,具有大内存窗口 (41.4V),长保留时间 (5000s) 和高电流开/关比 (10^5).
通过调整网关电压,证明了多层次的数据存储 (每单元3位).
制造的设备表现出有机薄膜 FG-OFET 存储器设备中报告的最佳性能.

结论:

液体表面阻力涂层策略为生长高质量的有机晶体提供了一种一般方法.
这种方法为开发高性能灵活存储器设备铺平了道路.
开发的FG-OFET内存设备显示了先进的非挥发性内存应用的前景.

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