通过在垂直多孔碳中进行 doping 来提高界面容量,以实现高性能交流过电化学电容器
Bin Chen1,2, Nan Huang1,2, Zhaofeng Zhai1
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.
Small (Weinheim an der Bergstrasse, Germany)
|January 31, 2024
概括
用添加的石墨烯纳米墙为电化学电容器 (EC) 提供了增强的界面电容. 这一突破使得高效的交流过具有超快的响应和高容量密度.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 纳米技术纳米技术
背景情况:
- 电化学电容器 (EC) 对于交流过至关重要,需要快速响应和高电容.
- 在电极设计中同时实现这两种特性存在重大挑战.
- 垂直导向的多孔碳结构具有增强的界面电容性提供了一个潜在的解决方案.
研究的目的:
- 通过兴奋剂来研究碳电极中界面电容 (Ci) 的增强.
- 开发大型,垂直导向的-合石墨烯纳米墙 (BGNW) 电极,用于高性能EC.
- 评估基于BGNW的EC的交流过能力.
主要方法:
- 密度函数理论 (DFT) 计算,通过兴奋剂预测Ci增强.
- 使用热丝化学蒸汽沉积 (HFCVD) 进行垂直导向的BGNWs的大规模合成.
- 在水和有机电解质中的BGNW电极的电化学表征.
主要成果:
- DFT计算证实,由于紧的诱导电荷层,兴奋剂增强了Ci.
- 在实验中,兴奋剂增加了Ci从4.20到10.16μF cm-2 .
- 基于BGNW的EC实现了高电容密度 (996 μF cm-2) 和能量密度 (1953 μFV cm-2),有效地平滑了120 Hz的交流.
结论:
- 将垂直导向的多孔碳与增强的界面容量相结合,有效地解决了EC设计的挑战.
- 兴奋剂显著提高了石墨烯纳米墙的界面电容.
- BGNW电极在交流过应用中表现出高性能,为未来的高频EC设计提供了洞察力.
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