石墨烯四周相互连接与后端兼容的流程
Chi-Yuan Kuo1, Jia-Heng Zhu1, Yun-Ping Chiu1
1Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan.
Nano letters
|January 31, 2024
概括
石墨烯全包围结构增强了互连,提高了电流密度,降低了下一代CMOS技术的电阻.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体制造业 半导体制造业
背景情况:
- 互补金属氧化物半导体 (CMOS) 技术的后端 (BEOL) 面临互连可靠性和性能方面的挑战.
- (Co) 是相互连接的有希望的材料,但其集成需要为先进节点增强性能.
研究的目的:
- 为了研究互连与石墨烯全方位 (GAA) 结构的整合.
- 评估GAA结构对联网电特性和可靠性的影响.
- 确认石墨烯在GAA架构中作为扩散屏障的作用.
主要方法:
- 热线化学蒸汽沉积 (HWCVD) 在380°C以生长GAA结构.
- 电气特性包括电流密度,电阻和电迁移寿命测量.
- 用X射线光电子光谱 (XPS) 和密度函数理论 (DFT) 进行材料分析.
- 时间依赖的介电分解 (TDDB) 测量以评估扩散屏障特性.
主要成果:
- 在BEOL热预算内,GAA结构成功地生长.
- 与GAA的Co互连显示电流密度增加了10.8%,电阻减少了27%.
- 在GAA中,Co互连的电迁移寿命延长了36倍.
- XPS和DFT证实了碳-Co的结合,提高了Co的稳定性.
- 石墨烯被证实在GAA结构中起到有效的扩散屏障作用.
结论:
- 该GAA结构显著提高了互连的电性能和可靠性.
- 观察到的改善归因于碳-Co 结合和石墨烯的扩散屏障特性.
- GAA Co 互连显示出强大的潜力,作为下一代互连材料,用于先进的 CMOS BEOL 应用.
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