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宽带短波近红外发射MgNb₂O₆:Cr³⁺用于电脑-LED应用

Dechao Yu^1,2,3, Qingyang Ding¹, Tiantian Shen¹

¹Engineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, PR China. dwzhang@usst.edu.cn.

Dalton transactions (Cambridge, England : 2003)

|January 31, 2024

概括

一种新的MgNb2O6:Cr3+提供970nm的宽带近红外 (NIR) 辐射,非常适合开发用于光谱和成像的新型NIR光转换发光二极管 (pc-LED).

科学领域:

材料科学材料科学材料科学
固态化学固态化学
光子学是指光子学的使用方法.

背景情况:

宽带近红外 (NIR) 发射对于开发NIR光转换发光二极管 (pc-LED) 来说至关重要.
现有的NIR光对于微型NIR光谱等先进应用是不够的.
需要具有广泛排放频段和高效率的新型.

研究的目的:

报告一种新的MgNb2O6:Cr3+多晶,具有宽带NIR发射.
调查负责NIR发射的光物理机制.
为了评估对NIR pc-LED应用的适用性.

主要方法:

合成MgNb2O6:Cr3+多晶的合成.
光发光性质的表征,包括辐射光谱和量子效率.
对Cr3+离子的晶体结构和局部协调环境的分析.
热火研究和NIR pc-LED的设备制造.

主要成果:

一种新的MgNb2O6:Cr3+呈现出以970nm为中心的宽带NIR发射,FWHM为~155nm.
优化的显示出高的内部量子效率 (~85.5%) 和适度的外部量子效率 (25.2%).
在制造的pc-LED设备中显示出中度的热稳定性和增强的NIR输出功率.

结论:

MgNb2O6:Cr3+ 是宽带 NIR pc-LED 的一个有希望的候选.
它的特性适用于生物医学成像,安全检测和智能识别方面的应用.
这些的进一步开发将使先进的NIR光谱和成像技术成为可能.

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