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垂直处理的 GaInP/InP 串联连接纳米线太阳能电池

David Alcer¹, Matteo Tirrito¹, Lukas Hrachowina¹

¹NanoLund and Division of Solid State Physics, Lund University, Box 118, Lund 221 00, Sweden.

ACS applied nano materials

|February 1, 2024

概括

我们开发了新的印化/印 (GaInP/InP) 联接纳米线太阳能电池. 优化材料组成实现了高开通电路电压,但电流密度有限,影响了整体效率.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
可再生能源可再生能源是可再生能源.

背景情况:

III-V纳米线 (NW) 为先进的光伏应用提供了潜力.
双联式太阳能电池通过利用更广泛的太阳能频谱来提高效率.
垂直处理使许多纳米线能够并行接触,从而改善了设备制造.

研究的目的:

为了研究GaInP组成对GaInP/InP联接纳米线太阳能电池性能的影响.
优化设备参数,以提高太阳能转换效率.
确定局限性,并建议对高效纳米线光伏的改进.

主要方法:

垂直加工的GaInP/InP联接III-V纳米线太阳能电池的制造.
对GaInP顶部连接材料组成的系统变化.
在AM1.5G照明下使用外部量子效率 (EQE) 和电流电压 (I-V) 测量进行表征.

主要成果:

设备与大约300万个纳米线并行接触.
GaInP和InP子细胞,以及Eskica道二极管,被集成到一个单一的纳米线中.
EQE测量表明,GaInP子细胞在所有设备上都是电流限制的.
I-V测量证实了子电池电压的增加,实现了高达1.91V的开放电路电压.
短路电流密度在0.24至3.44mA/cm2之间,导致最大太阳能转换效率为3.60%.

结论:

优化 GaInP 组成对于联连接纳米线太阳能电池性能至关重要.
目前,GaInP子电池限制了整体电流密度和效率.
需要进一步改进,以克服目前的局限性,并推进纳米线光伏.

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