高垂直度的GaAs0.99Bi0.01纳米线的蒸汽-液体-固体生长,使用Ga-Bi辅助的催化滴

Chalermchai Himwas1, Visittapong Yordsri2, Chanchana Thanachayanont2

  • 1Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University 254 Phayathai Road Bangkok 10330 Thailand Chalermchai.H@chula.ac.th.

Nanoscale advances
|February 1, 2024
PubMed
概括

这项研究探讨了使用水滴作为催化剂来生长化 (GaAsBi) 纳米线. 最佳的生长条件产生了具有特定结构和石含量的GaAsBi纳米线,但光学性能因载体热化而受到限制.

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