在前体预处理基质上沉积SnS2膜的原子层沉积
Jungtae Kim1, Dowwook Lee2, Jangho Bae2
1Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 04673, Republic of Korea.
Nanotechnology
|February 2, 2024
概括
这项研究引入了一种前体多剂量方法,以提高锡二硫化物 (SnS2) 薄膜质量. 这种技术提高了先进的半导体设备的结晶性,使灵活和后端应用程序的性能更好.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 半导体物理 半导体物理
背景情况:
- 二维 (2D) 材料为未来的电子设备提供独特的特性.
- 锡二硫化物 (SnS2) 适用于低温加工,非常适合灵活和后端线 (BEOL) 应用.
- 低温合成SnS2往往导致晶度差,限制了其工业用途.
研究的目的:
- 提高锡二硫化物 (SnS2) 的结晶性和薄膜质量.
- 开发一种用于SnS2沉积的新型前体预处理方法.
- 为了使SnS2在需要高质量的薄膜的苛刻半导体应用中得到使用.
主要方法:
- 在SnS2沉积之前,采用了前体多剂量方法.
- 原子层沉积周期用于前体预处理,以增强基质吸附.
- 使用X射线衍射,拉曼光谱,传输电子显微镜,原子力显微镜和X射线光电子光谱来评估电影质量.
主要成果:
- 前体预处理显著增加了基质上的前体吸附.
- 这种增强的吸附导致SnS2膜的生长率更高.
- 在预处理过程后,观察到锡二硫化物薄膜的结晶性得到改善.
结论:
- 拟议的前体多剂量方法有效地提高了SnS2膜质量.
- 这种技术为在低温下生产高晶度SnS2薄膜提供了可行的解决方案.
- 这些发现支持SnS2在先进的灵活和BEOL电子设备中的使用.
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