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Updated: Jul 4, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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对屏幕移动技术的EBSD模式中心的准确和快速定位

Wei Li1, Xingui Zhou2, Jingchao Xu1

  • 1CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, China.

Ultramicroscopy
|February 3, 2024
PubMed
概括

本研究介绍了一种快速算法,用于精确确定电子反射散射 (EBSD) 中的图案中心 (PC),以实现高精度,以最小的计算时间来改进材料分析.

关键词:
在 EBSD 校准过程中,全球交叉相关性全球交叉相关性在ICGN中,ICGN是ICGN.图案中心 图案中心屏幕移动技术 屏幕移动技术

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相关概念视频

Scanning Electron Microscopy01:07

Scanning Electron Microscopy

A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
Fundamental Principles
Accelerated...
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