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在GaN/SiC接口与AlN过渡层之间增强的热边界导电性

Ruiyang Li¹, Kamal Hussain², Michael E Liao³

¹Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States.

ACS applied materials & interfaces

|February 5, 2024

概括

添加化 (AlN) 过渡层显著提高了化 (GaN) - 化碳 (SiC) 电子中的散热. 热边界导电率 (TBC) 的这种改善甚至在原子水平上也可以观察到,从而提高了设备的性能.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
半导体设备半导体设备

背景情况:

有效的散热对于高功率化 (GaN) 电子产品的性能和可靠性至关重要.
化 (AlN) 过渡层经常用于GaN-on-Silicon Carbide (SiC) 基板生长,但它们对GaN/SiC接口的热传输的影响尚未完全理解.

研究的目的:

通过实验测量跨不同AlN过渡层厚度的GaN/SiC接口的热边界导电率 (TBC).
研究AlN层对GaN晶体质量的影响及其对界面热传输的影响.
通过分子动力学模拟,阐明观察到的TBC变化背后的机制.

主要方法:

在GaN/SiC接口与AlN层 (0-73 nm) 上在各种温度下测试TBC.
结构特征技术来评估GaN的晶体质量.
基于深度学习的分子动力学模拟采用原子间潜能.

主要成果:

添加AlN过渡层显著增加了GaN/SiC接口的TBC,特别是在更高的温度下.
AlN 层改善了接口附近的 GaN 层的晶体质量.
模拟证实了实验中的TBC增强,即使对于原子完美的接口,也表明了"声桥"效应.

结论:

在高功率电子产品中,AlN过渡层有利于在GaN/SiC接口上增强热传输.
改善的TBC归因于增强的晶体质量和AlN层的语音介质作用的结合.
这些发现为优化基于GaN的设备的热管理提供了关键的见解.

关键词:

在SiC上的GaN-on-SiC 化的化是一种化.这座桥是Phonon桥.热边界导电性热边界导电性时间域热度反射反射度.

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