在安格斯特罗姆层状HfO2/ZrO2铁电容器中的Mo/TiON电极的可调节缺陷工程,以实现长期耐用性和高温保留
Sheng-Min Wang1, Cheng-Rui Liu1, Yu-Ting Chen1
1Department of Electrical Engineering, National Central University, Taoyuan 320317, Taiwan, ROC.
Nanotechnology
|February 5, 2024
概括
一种新型的层氧化 (HZO) 薄膜,配有TiN/Mo/TiO2N电极,可提高铁电电容的耐用性,达到10^11周期和数据保留. 这种缺陷控制方法提高了内存设备的性能.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 电气工程 电气工程
背景情况:
- 铁电随机访问存储器 (FeRAM) 面临的是耐用性和数据保留方面的挑战.
- 氧化 (HZO) 是铁电应用的一个有前途的材料.
- 现有的基于HZO的设备需要在操作稳定性和长期数据存储方面进行显著改进.
研究的目的:
- 为基于HZO的铁电电容器提出并研究一种新的缺陷控制策略.
- 为了提高HZO铁电设备的耐用性和数据保留能力.
- 通过界面工程来阐明性能改进背后的机制.
主要方法:
- 使用多功能TiN/Mo/TiO2N电极制造层层的HfO2/ZrO2薄膜.
- 电气性能的实验性表征,包括泄漏电流,耐力和极化.
- 分析缺陷迁移障碍和工作功能的第一原则计算.
- 配合阿雷尼乌斯方程来预测数据保留温度.
主要成果:
- 达到10^11周期的耐力,其余极化 (2Pr) 为34μC cm^-2.
- 确定了一种富含氧的接口,可以减少泄漏电流并提高耐力.
- 证明TiO2N接口层增加了HZO颗粒大小,并提高了极化逆转速度.
- 预计在109.6°C的温度下保留10年的数据,远远超过传统方法.
结论:
- 接口工程对于克服铁电记忆中的耐用性和数据保留限制至关重要.
- 拟议的层HZO结构与TiN/Mo/TiO2N电极为高性能FeRAM提供了可行的解决方案.
- 这种方法可以在高温下进行强大,长期的数据存储,这对于先进的内存应用至关重要.
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