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Updated: Jul 4, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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高性能MoS2光电晶体管与Hf1-xAlxO后门介电层由等离子增强原子层沉积增长的后门介电层

Qiu-Jun Yu1, Xiao-Xi Li1,2, Yu-Chun Li1

  • 1State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.

Nanotechnology
|February 5, 2024
PubMed
概括

胺氧化通过减少泄漏电流来改善硫化 (MoS) 光传感器. 这种增强导致优越的光电子性能,为先进的光探测器应用铺平了道路.

关键词:
Hf1x Al x O 的时间在MoS2中,MoS2就是MoS2.门介电器 门介电器光响应性是指光响应性.光电晶体管的光电晶体管

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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors12:32

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