C,Ge-doped h-BN

Hoang Van Ngoc1, Chu Viet Ha2

  • 1Center for Forecasting Study, Institute of Southeast Vietnamese Studies, Thu Dau Mot University, Thu Dau Mot, Binh Duong Province, Vietnam.

概括

本研究探讨了六角化 (h-BN) 量子点,揭示了它们独特的光学和电磁性质. 用碳 (C) 和 (Ge) 进行兴奋剂增强了稳定性和透明度,在纳米技术中具有有前途的应用.