相关实验视频

Updated: May 4, 2026

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties

Published on: August 15, 2015

在ZrNiSn基复合材料中通过调制Si添加来提高热电性能

Chuang Jia^1,2, BeiBei Zhu^1,2, Yangyang Shi^1,2

¹School of Materials Science and Engineering, Southeast University, Nanjing 211189, China.

ACS applied materials & interfaces

|February 7, 2024

概括

将 (Si) 添加到尼克锡 (ZrNiSn) 中,可以提高其热电性能. 这种策略通过优化电荷载体行为来降低导热率并提高功率 (zT) 的数字.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
纳米技术纳米技术

背景情况:

尼克锡 (ZrNiSn) 是一个有前途的热电材料.
最佳性能需要低导热率和在高温下最小的双极效应.

研究的目的:

研究 (Si) 兴奋剂对ZrNiSn.热电特性的影响.
通过加入p型Si来增强n型ZrNiSn的热电性能.

主要方法:

在各种多水平下将Si整合到ZrNiSn中,形成ZrNiSn/ZrNiSi/Si复合物.
对Seebeck系数,电荷载体度和在873K的导热率进行分析.
通过能量过来研究电子转移和少数电荷载体抑制.

主要成果:

塞贝克系数增加了16%,达到873K,尽管航空公司度增加了三倍.
引入Si导致能量过,抑制少数电荷载体.
在Si中,高剂量 (10^1910^20 cm^-3) 通过混合接口将导热率降低15%.
实现了热电功率 (zT) 的增加50%.

结论:

精确的Si兴奋剂有效地调节了ZrNiSn.中的电子转移.
结合最佳的p型Si增强了n型ZrNiSn的热电性能.
新的二次相接口提供了一种解电导率和Seebeck系数的方法.

关键词:

这就是ZrNiSnnn.接口屏障是一个界面屏障.模块化兴奋剂的使用方法在n-/p型SiSi中.热电材料是一种热电材料.

更多相关视频

Author Spotlight: Advancing Energy Solutions Using Nanocomposites as Processed Thermoelectric Materials

Author Spotlight: Advancing Energy Solutions Using Nanocomposites as Processed Thermoelectric Materials

Published on: May 17, 2024

Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics

Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics

Published on: August 30, 2024

相关概念视频

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...