通过电子冲击诱导的Ir和BiM子的X射线生产截面
M D Décima1, G E Castellano1, J C Trincavelli1
1Instituto de Física Enrique Gaviola (IFEG-CONICET), Facultad de Matemática, Astronomía, Física y Computación (FAMAF), Universidad Nacional de Córdoba, Córdoba, Argentina.
Ultramicroscopy
|February 7, 2024
概括
这项研究使用电子束测量了 (Ir) 和 (Bi) 目标的MX射线生产截面. 结果为了解材料科学中的X射线相互作用提供了有价值的数据.
科学领域:
- 原子物理 原子物理
- 材料科学 材料科学 材料科学
- 射线光谱 X射线光谱
背景情况:
- X射线生产的截面对于元素分析和理解原子相互作用至关重要.
- 以前测量这些截面的方法在准确性和范围上有局限性.
- 准确的M-shell数据对于材料表征的先进应用至关重要.
研究的目的:
- 间接测量 (Ir) 和 (Bi) 目标的M子X射线生产截面.
- 验证一种用于预测X射线发射光谱的新型分析方法.
- 将实验结果与现有的理论和经验预测进行比较.
主要方法:
- 在扫描电子显微镜中用单能电子束 (2.228 keV) 辐射纯散装Ir和Bi目标.
- 使用能量分散光谱仪获取X射线辐射光谱.
- 通过参数优化程序和基于电离深度分布的分析预测模型处理光谱数据.
主要成果:
- 间接测量Ir和Bi.的M子X射线生产截面的间接测量.
- 开发的分析方法为获得横截面值提供了可靠的方法.
- 与文献数据的比较显示出良好的一致性,验证了采用的方法.
结论:
- 该研究使用间接方法成功确定了Ir和Bi的MX射线生产截面.
- 分析预测方法,包括电离深度分布,证明有效.
- 这些发现为原子物理学和材料分析提供了重要的数据,有助于完善理论模型.
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