交叉方位切换的T型多级逆变器的基于电容器的拓
Ali Seifi1, Seyed Hossein Hosseini2,3, Mehrdad Tarafdar Hagh2
1Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, 51666-16471, Iran. A.seifi@tabrizu.ac.ir.
Scientific reports
|February 7, 2024
概括
介绍了一种基于电容的多级逆变器拓,利用两个交叉方位切换T型逆变器. 这种设计减少了组件和功耗损失,在模拟和实际实施中展示了高效的性能.
科学领域:
- 电气工程 电气工程
- 电力电子 电力电子 电力电子
背景情况:
- 多级逆变器对于功率转换至关重要,但现有的拓常常面临组件数量和效率方面的挑战.
- 基于电容的多层逆变器提供优势,但需要创新的结构来提高性能.
研究的目的:
- 介绍和分析一种新的基于电容的多层逆变器拓.
- 评估拟议拓的效率,组件数和电压水平生成能力.
主要方法:
- 拟议的拓组合了两个交叉方位开关T型逆变器,可适应模块化和级联配置.
- 最近级调制 (NLM) 切换用于低频切换,以产生电压水平.
- 通过MATLAB/Simulink模拟和实验室实施来验证性能.
主要成果:
- 新的拓学可以通过低功耗开关实现更高的电压水平,特别是在级联模式下.
- 关键优势包括消除H桥模块,减少开关元件和直流电压源,降低总阻塞电压.
- 电流路径中的导电开关较少会导致导电损失减少,这是模拟证实的.
结论:
- 拟议的基于电容的多层逆变器拓在各种条件下展示了高效和适当的性能.
- 其降低的组件数量和较低的功耗损失使其成为功率转换应用的有希望的替代品.
相关概念视频
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The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
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01:25MOS Capacitor
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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01:23Voltage Doubler Circuit
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01:25Capacitance: Single-Phase And Three-Phase Line
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01:17The Delta-to-Delta Circuit
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