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Updated: Jul 4, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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由5nm以下构建的坡垂直传输晶体管 薄型范德瓦尔斯异构结构

Qiyu Yang1, Zheng-Dong Luo2,3, Huali Duan4

  • 1State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.

Nature communications
|February 7, 2024
PubMed
概括

新的垂直传输场效应晶体管 (VTFET) 使用一种新的异质连接和值开关,用于坡,低功耗的操作. 这些先进的二维半导体设备克服了电子产品的缩放限制.

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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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