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在室温下对基于Ta的极紫外线光罩进行湿清洁

Jehwan Park¹, Woong Choi¹, Jihyun Kim¹

¹Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea.

|February 8, 2024

概括

一种新的室温湿清洗方法可以有效地清洗基于的极紫外线 (EUV) 光罩. 这一过程最大限度地减少了图案损伤,并减少了颗粒数量,提高了光罩的耐用性和生产力.

科学领域:

半导体制造业半导体制造业
材料科学材料科学材料科学
纳米技术纳米技术

背景情况:

深紫外线 lithography 面临的波长限制.
极端紫外线 (EUV) 石版使用13.5纳米波长用于先进的半导体制造.
由于传统薄膜的局限性,EUV光罩需要有效的清洁方法.

研究的目的:

为了研究基于Ta的EUV光罩的室温湿清洗方法.
评估清洁对图案步高,表面地形和颗粒数量的影响.
为了比较硫酸-过氧化混合物 (SPM) 和标准清洁-1 (SC-1) 处理的疗效.

主要方法:

对基于Ta的EUV光罩的湿清洗方法的系统检查.
使用原子力显微镜 (AFM) 和X射线反射率 (XRR) 进行分析.
评估的关键参数:图案阶段高度,表面地形和颗粒数量.

主要成果:

SPM治疗导致稳定的步骤高度,这表明模式退化最小.
SPM清洁导致表面粗度降低,颗粒数量显著下降.
在SC-1处理过程中,表面不规则和颗粒物增加,尽管保留了图案结构.

结论:

使用SPM的室温湿清洗方法对基于Ta的EUV光罩有效.
这种方法有效地减少了磨损,并消除了污染物.
这种清洁方法有可能延长EUV光罩的生产力和耐用性.

关键词:

清洁清洁清洁清洁这是一个极端的极端.摄影面罩的使用方法紫外线是一种紫外线.湿的湿的湿的湿的湿的

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