Jove
Visualize
联系我们

相关概念视频

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

576
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
576

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Rapid Artificial Intelligence Autoplanning Rivals Manual Expert Planning for Cervical Brachytherapy.

Practical radiation oncology·2026
Same author

Integration of single-click, AI-based brachytherapy auto-planning for cervical cancer within a treatment planning system.

Brachytherapy·2025
Same author

Ultrafast nonlinear absorption of Haldane model quantum dots.

Journal of physics. Condensed matter : an Institute of Physics journal·2025
Same author

Ultrafast field-driven valley polarization of transition metal dichalcogenide quantum dots.

Journal of physics. Condensed matter : an Institute of Physics journal·2024
Same author

Ultrafast pulse pumping of topological nanospaser.

Journal of physics. Condensed matter : an Institute of Physics journal·2023
Same author

Topological resonance in graphene-like materials.

Journal of physics. Condensed matter : an Institute of Physics journal·2022
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关实验视频

Updated: Jul 4, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.2K

在石墨烯量子点中产生高波.

Ahmal Jawad Zafar1, Aranyo Mitra1, Vadym Apalkov1

  • 1Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, United States of America.

Journal of physics. Condensed matter : an Institute of Physics journal
|February 8, 2024
PubMed
概括

我们理论上研究了石墨烯量子点中的高波生成. 改变量子点大小控制了辐射光谱,降低了低波强度,同时随着脉冲强度增加了切断频率.

科学领域:

  • 凝聚物质物理学 凝聚物质物理学
  • 量子光学是一种量子光学.
  • 材料科学 材料科学 材料科学

背景情况:

  • 石墨烯量子点 (QD) 具有独特的电子特性.
  • 高波生成 (HHG) 是非线性光学中的一个关键过程.
  • 了解纳米结构材料中的HHG对于新型光源至关重要.

研究的目的:

  • 理论上研究磁盘石墨烯量子点中的高波生成.
  • 为了研究量子点大小对产生的辐射光谱的影响.
  • 探索脉冲强度对光谱特征的作用.

主要方法:

  • 对石墨烯量子点的有效迪拉克型模型.
  • 长度表形式主义来描述光物质相互作用.
  • 高波谱的理论分析.

主要成果:

  • 生成的辐射光谱可以通过量子点半径来控制.
  • 增加QD半径会降低低波强度.
  • 截止频率随着QD半径的增加而增加,对脉冲强度敏感.

结论:

关键词:
石墨烯是一种石墨烯.高波的产生高波的产生.非线性光学是一种非线性光学.一个量子点,一个量子点.

更多相关视频

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.5K
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

9.2K

相关实验视频

Last Updated: Jul 4, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.2K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.5K
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

9.2K
  • 石墨烯量子点对受控的高波产生有希望.
  • 量子点大小为HHG光谱提供了一个可调节的参数.
  • 脉冲强度显著影响光谱切断,提供进一步的控制.