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Updated: Jul 4, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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在石墨烯量子点中产生高波

Ahmal Jawad Zafar1, Aranyo Mitra1, Vadym Apalkov1

  • 1Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, United States of America.

Journal of physics. Condensed matter : an Institute of Physics journal
|February 8, 2024
PubMed
概括

我们理论上研究了石墨烯量子点中的高波生成. 改变量子点大小控制了辐射光谱,降低了低波强度,同时随着脉冲强度增加了切断频率.

关键词:
石墨烯是一种石墨烯.高波的产生高波的产生.非线性光学是一种非线性光学.一个量子点,一个量子点.

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相关概念视频

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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