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Updated: Aug 8, 2026

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
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通过双封装增强全无机矿发光二极管的稳定性

Jindou Shi1, Zeyu Wang2, Nikolai V Gaponenko3

  • 1Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education International Center for Dielectric Research&Shannxi Engineering Research Center of Advanced Energy Materials and Devices, Xi'an Jiaotong University, Xi'an, 710049, China.

Small (Weinheim an der Bergstrasse, Germany)
|February 9, 2024
PubMed
概括

这项研究通过使用双封装方法提高矿白色发光二极管 (WLED) 的稳定性. 新的复合纤维在高温和湿度下提高了性能,为商业WLED应用铺平了道路.

关键词:
CsPbBr3 其他国家标准.CsPbX3@SiO2 / Al2SiO5 CFs的使用情况双封装封装是一种双重封装.热稳定性的热稳定性白色发光二极管是一种白色发光二极管.

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...