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Updated: Jul 30, 2026

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM
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Published on: June 16, 2016

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基于AlGaN的高热性能紫外线 (368nm) 翻转芯片LED具有优化的结构

Guanlang Sun1, Taige Dong1,2, Aixin Luo1

  • 1School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528225, China.

Nanomaterials (Basel, Switzerland)
|February 9, 2024
PubMed
概括

这项研究介绍了一种具有对称电极和金属反射层的新型翻转芯片LED设计,展示了优越的散热,以改善紫外线LED的热管理.

关键词:
368 纳米的长度是 368 纳米的长度在 GaN GaN 中.氧化 (ITO) /反射镜反射镜

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相关概念视频

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...