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异质连接装置由喷的Ga2O3组合与喷的NiO和Cu2O组合而成

Theodoros Dimopoulos¹, Rachmat Adhi Wibowo¹, Stefan Edinger¹

¹Energy Conversion and Hydrogen Technologies, Center for Energy, AIT Austrian Institute of Technology, Giefinggasse 2, 1210 Vienna, Austria.

Nanomaterials (Basel, Switzerland)

|February 9, 2024

概括

氧化 (Ga2O3) 与氧化铜 (Cu2O) 和氧化 (NiO) 的异质连接显示出高整形. 在太阳能电池应用中,Ga2O3/Cu2O连接表现出卓越的性能.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
纳米技术纳米技术

背景情况:

氧化 (Ga2O3) 是一个有前途的n型半导体用于电子设备.
异质连接对于先进的设备功能至关重要,包括太阳能电池和光电子.
了解带对齐和接口属性是优化异质连接性能的关键.

研究的目的:

为了研究n型Ga2O3与p型NiO和Cu2O结合的特性.
为了评估Ga2O3/NiO和Ga2O3/Cu2O异质连接在光电子应用中的性能.
分析影响设备性能的带对齐和接口特征.

主要方法:

在高温下通过超声波喷雾热解沉积n型Ga2O3.
使用无线电频率和反应性直流磁力电子喷射来沉积p型NiO和Cu2O.
印氧化 (ITO) 涂层玻璃上的异质连接的制造和表征.

主要成果:

在制造的Ga2O3/Cu2O和Ga2O3/NiO异质连接中观察到高整形.
在模拟太阳照明下,Ga2O3/Cu2O的开放电路电压为940mV,而Ga2O3/NiO的开放电路电压为220mV.
确定了有利的带对齐,对Ga2O3/Cu2O进行小导电带偏移,对Ga2O3/NiO进行大偏移.

结论:

这项研究表明了基于Ga2O3的异质连接对太阳能电池和光电子产品的潜力.
在Ga2O3/Cu2O异质连接显示出有前途的性能,由于有利的带对齐.
Ga2O3和ITO之间的接口不会阻碍电子传输,从而使新的设备设计成为可能.

关键词:

铜氧化物铜氧化物电子传输层是电子传输层.氧化的氧化.异质连接的异质连接孔运输层孔运输层氧化的氧化是什么太阳能电池是太阳能电池中的一个.喷雾式热解是喷雾式的.喷喷是一种喷.

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