分级带间隙氧化-锡薄膜晶体管,具有垂直堆叠结构,用于波长选择性光检测
Jiahui Teng1, Yantao Chen1, Chunming Huang1
1School of Microelectronics, Fudan University, Shanghai 200433, China.
ACS applied materials & interfaces
|February 9, 2024
概括
研究人员开发了新的垂直堆叠的分级频段间隙氧化-锡 (ZTO) 薄膜晶体管,用于波长选择性光电探测器. 这些CMOS兼容的设备可以实现彩色成像和先进的光电子应用.
科学领域:
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
- 半导体设备 半导体设备
背景情况:
- 波长选择性光电探测器对于智能传感器和人工智能至关重要,但在大规模准备和CMOS兼容性方面面临挑战.
- 现有技术在集成和可扩展性方面扎,阻碍了在先进应用中广泛采用.
研究的目的:
- 开发CMOS兼容的大型波长选择性光探测器.
- 通过新型材料设计和制造来解决当前光探测器技术的局限性.
主要方法:
- 使用原子层沉积 (ALD) 通过调整 ZnO 和 SnO2 的比率来制造带间隔变化的氧化-锡 (ZTO) 薄膜.
- 使用连续ALD.垂直堆叠的分级带隙ZTO (S-ZTO) 薄膜晶体管 (TFT) 的构建.
- 描述ZTO TFT的性能,光谱响应和稳定性.
主要成果:
- ZTO TFT显示可调节带间隙和可改进的移动性 (高达30 cm2/V s) 随着Sn比率的增加.
- 垂直堆叠的S-ZTO TFT显示出高性能 (移动性为18.4 cm2/V s,开关比>10 ^ 7) 和不同波长的不同光响应.
- 一个由S-ZTO TFTs组成的设备阵列成功展示了彩色成像能力.
结论:
- 垂直堆叠的分级带间隔ZTO TFT为CMOS兼容的波长选择性光检测提供了一个有前途的解决方案.
- 开发的技术使先进的光电子应用,包括彩色成像,具有更好的性能和可集成性.
- 这项工作为未来智能传感器系统的紧且可扩展的光探测器阵列铺平了道路.
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