索尔凝合成无形 (InxGa1-x) 2O3用于具有高响应性的紫外线光检测
Yupeng Zhang1, Ruiheng Zhou1, Xinyan Liu1
1College of Electronic Science & Engineering, Jilin University, Changchun 130012, China.
Sensors (Basel, Switzerland)
|February 10, 2024
概括
氧化物 (Ga2O3) 中的兴奋剂通过增加光电流来增强紫外线 (UV) 光探测器. 这项研究开发了 (InxGa1-x) 2O3 材料,为紫外线检测应用实现了高性能.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 光电学是指光电子产品.
背景情况:
- β-氧化物 (β-Ga2O3) 光探测器为紫外线检测提供低暗电流和抗辐射.
- 在β-Ga2O3中有限的光电流限制了其实际应用.
- 开发新材料对于提高紫外线光电探测器性能至关重要.
研究的目的:
- 为了研究兴奋剂对Ga2O3对金属半导体金属 (MSM) 紫外线光探测器的影响.
- 探索度,氧空缺和光探测器性能之间的关系.
- 为了确定一个有前途的材料,用于高性能紫外线检测.
主要方法:
- 使用sol-gel方法制造 (InxGa1-x) 2O3薄膜.
- 制造材料的结构和电气性能的表征.
- 具有不同含量的MSM紫外线光探测器的性能评估.
主要成果:
- 印兴奋剂诱导了格子扭曲和增加了Ga2O3.3中的氧气空缺.
- 氧气空缺被比例调节,提高了电子度.
- 无形In0.4Ga1.6O3光探测器显示出高的光暗电流比率 (2.8 × 10 ^ 3) 和响应率 (739.2 A/W).
结论:
- 添加的Ga2O3是一种有前途的材料,可以提高UV光电探测器的性能.
- 通过印兴奋剂优化氧空置度是改善光电流的关键.
- 在0.4Ga1.6O3为高性能MSM紫外线光探测器应用提供了可行的解决方案.
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