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通过像素化STEM和离轴电子全息 (或收光束与平面波) 来测量半导体设备中的电特性

David Cooper¹, Lucas Bruas¹, Matthew Bryan¹

¹Universite Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France.

Micron (Oxford, England : 1993)

|February 10, 2024

概括

这项研究比较了像素化的差相对比扫描传输电子显微镜 (DPC-STEM) 和离轴电子全息 (EH) 用于电场测量. 与DPC-STEM相比,具有平面电子波的EH通过最小化衍射对比度提供了更准确的结果.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
电子显微镜电子显微镜

背景情况:

准确测量半导体设备中的电场对于理解其性能至关重要.
扫描传输电子显微镜 (STEM) 和电子全息 (EH) 是纳米尺度表征的先进技术.

研究的目的:

为了比较像素差相对比 (DPC) STEM和离轴电子全息 (EH) 的电场测量的功能.
在技术相关的半导体样本上评估每个技术的优点和局限性.
在这些测量的背景下定义和讨论伪场的概念.

主要方法:

使用像素化的DPC-STEM与融合电子束.
采用离轴电子全息 (EH) 技术,使用平面电子波.
检查了三种样本类型:Si pn连接,SiGe超网格和InGaN/GaN微线发光二极管 (LED).

主要成果:

DPC-STEM和EH都能测量电场,但准确性高度依赖于最小化衍射对比度.
使用平面电子波的EH被证明比DPC-STEM更有利,用于准确的场测量.
该研究强调了平均内部电位变化和晶格结构对测量信号的影响.

结论:

尽量减少衍射对比度对于使用电子显微镜技术进行精确的电场测量至关重要.
带有平面电子波的离轴电子全息是一种在复杂的半导体设备中准确地绘制电场的优质方法.
这些发现为选择适合纳米电场分析的电子显微镜技术提供了指导.

关键词:

在4D STEM中,不同相位对比的相位对比差异.电场是一个电场.电子全息学电子全息学半导体半导体半导体

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