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Updated: Jul 3, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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MoS2 通过接触兴奋剂和通过离子的缺陷被动化以及其循环场辅助激活来提高场效应晶体管的性能

Anand Kumar Rai1, Asif A Shah1, Jeevesh Kumar1

  • 1Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India.

ACS nano
|February 12, 2024
PubMed
概括

这项研究引入了一种新的CF4等离子处理和离子激活技术,以显著降低二硫化 (MoS2) 场效应晶体管 (FET) 的接触电阻和被动缺陷. 这种方法提高了载体的移动性和启动电流,提高了设备的性能,而不会影响开/关比.

关键词:
在 DFT 方面,它是最重要的.在MoS2 FET中,接触电阻的提高,接触电阻的提高.分子动力学分子动力学血接触兴奋剂的使用硫空缺缺陷被动化 硫空缺缺陷被动化

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