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Updated: Jul 3, 2025

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars
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Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Published on: February 11, 2020

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在4H-碳化物中选择性生成V2空缺中心

Yongzhou Xue1, Michael Titze2, John Mack1

  • 1James C. Wyant College of Optical Sciences, University of Arizona, Tucson, Arizona 85721, United States.

Nano letters
|February 13, 2024
PubMed
概括

研究人员使用聚焦离子束植入方法在4H-碳化中选择性地产生V2空缺. 这一突破使得对缺陷类型的精确控制成为可能,进步了量子技术.

关键词:
4H-SiC 4H-SiC 是一个这是一个V2类型的V2型.离子植入植入的离子植入.选择性发电是一种选择性发电方式.的职位空缺中心.

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相关概念视频

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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