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加强对空间原子层沉积的控制:对前体扩散,几何参数和CVD缓解策略的见解

Thien Thanh Nguyen¹, Diem Nguyen Thi Kieu^1,2, Hao Van Bui¹

¹Faculty of Materials Science and Engineering, Phenikaa University, Hanoi 12116, Vietnam.

|February 13, 2024

概括

空间原子层沉积 (SALD) 加快了生长,但面临着化学蒸气沉积 (CVD) 的挑战. 这项研究揭示了扩散和几何如何影响SALD的增长,为改善片控制提供了洞察力.

科学领域:

材料科学材料科学材料科学
化学工程是化学工程的重要组成部分.
纳米技术纳米技术

背景情况:

空间原子层沉积 (SALD) 提供了快速的,大气压膜增长,超过了传统的原子层沉积 (ALD).
无意中化学蒸汽沉积 (CVD) 在SALD中的贡献阻碍了对薄膜均性和特性的控制.
了解前体扩散,系统几何和生长动力学之间的相互作用对于优化SALD至关重要.

研究的目的:

研究扩散系数和几何参数对空间原子层沉积 (SALD) 增长模式的影响.
开发物理模型和模拟来阐明SALD生长动力学.
提供控制ALD/CVD生长模式和增强膜特性的策略.

主要方法:

开发了SALD生长动力学的综合物理模型.
采用有限元法 (FEM) 模拟用于流体动力学分析.
进行了ZnO和SnO2膜沉积的实验研究,分析了沉积间隙的成长率.

主要成果:

实验结果与理论模型一致,显示ZnO和SnO2薄膜的明显增长率趋势,基于沉积差距,归因于前体扩散.
减少沉积间隙有利于扩散性和低挥发性前体,最大限度地减少心血管疾病并增强化学吸收.
对于高度扩散的前体,小于100μm的间隙是关键的,但对于扩大规模来说具有挑战性;调整气体出口分离可以减轻CVD.

结论:

扩散系数和几何参数显著影响SALD生长模式和薄膜特性.
优化沉积间隙和气体输出配置是控制ALD/CVD增长平衡的关键.
对注射头设计的战略调整可以提高膜质量,并使大规模的SALD应用成为可能.

关键词:

在CVD中,CVD是非常重要的.存款缺口的时间差距扩散系数扩散系数混合前体的混合.空间ALD的使用.

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