巨大的磁电阻切换诱导的d0铁磁性MgO在一个半导体纳米通道设备与铁磁Fe/MgO电极的铁磁性MgO的电磁性
Shinobu Ohya1,2,3, Shun Tsuruoka1, Masaya Kaneda1
1Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
Advanced materials (Deerfield Beach, Fla.)
|February 14, 2024
概括
研究人员在一款新型设备中发现了巨大的磁电阻开关 (CMRS). 这一突破利用了在离子空位中的旋转三重状态,使磁场控制能够用于先进的内存和计算应用.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 电阻开关 (RS) 设备对于下一代内存和神经形态计算至关重要.
- 在RS的氧化物材料中,离子空位旋转三重体状态的作用在很大程度上尚未被探索.
- 在d0系统中的铁磁性可以来自自旋三重体状态和双交换相互作用.
研究的目的:
- 调查异常和巨大的磁电阻切换 (CMRS) 现象.
- 探索旋转三重状态的潜力,为设备功能提供空缺职位.
- 为了展示一种具有高磁场依赖性的新型RS设备.
主要方法:
- 使用Ge纳米通道与表轴Fe/MgO电极制造一种非传统的RS装置.
- 在不同磁场下对设备的电阻切换行为进行表征.
- 分析潜在的物理机制,包括旋转三重状态和双交换相互作用.
主要成果:
- 证明了具有显著磁场依赖的异常和巨大磁铁-RS (CMRS).
- 通过应用磁场来观察控制值电压和启/关比.
- 将CMRS归因于d0-铁磁丝,由旋三位状态的Mg空隙和Fe/MgO近距离效应形成.
结论:
- 这项研究揭示了巨大的磁电阻切换 (CMRS) 的新现象,可以通过磁场控制.
- 这些发现突显了旋转三重状态对于旋转电子设备应用的职位空缺的重要性.
- 这项工作为开发具有多领域易感性的节能CMRS设备铺平了道路.
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