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Updated: Jul 3, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

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介面负磁化在Ni封装层调节嵌套的MoS2纳米结构中,具有强大的内存应用程序.

Shatabda Bhattacharya1,2, Tatsuhiko Ohto2, Hirokazu Tada2

  • 1School of Materials Sciences, Indian Association for the Cultivation of Science Jadavpur Kolkata-700032 India cnssks@iacs.res.in.

Nanoscale advances
|February 15, 2024
PubMed
概括

研究人员通过将 (Ni) 封装在二硫化 (MoS2) 中,创造了一种新的混合纳米结构. 这种结构表现出不寻常的负磁化和强大的热磁记忆,可通过温度和磁场控制.

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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy10:40

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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