在半导体聚合物中通过陷前体粒子之间缓慢的三重碰撞形成电子陷
Mohammad Sedghi1, Camilla Vael2,3, Wei-Hsu Hu1,2
1Laboratory for Functional Polymers, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland.
Science and technology of advanced materials
|February 16, 2024
概括
在半导体聚合物中确定了通用电子陷. 这些陷很可能是由涉及氧和水分子的三重碰撞过程形成的,从而形成了一个特定的复合体.
科学领域:
- 材料科学 材料科学 材料科学
- 聚合物电子技术 聚合物电子技术
- 有机半导体 有机半导体
背景情况:
- 之前的研究报告了半导体聚合物中的通用电子陷 (在真空以下的3.6 eV下≈3×1017 cm−3).
- 这些陷的外在起源被假设,水氧复合物被认为是候选物,但缺乏确的证据.
研究的目的:
- 研究聚合物二极管中可逆电子陷的温度依赖性.
- 阐明半导体聚合物中通用电子陷的形成机制和起源.
主要方法:
- 在偏差应力下,研究了聚合物二极管中电子陷的温度依赖性.
- 分析了陷积累动力学和动力学.
- 与分子相互作用相关的陷特性.
主要成果:
- 可逆电子陷 (在真空下3.6 eV时密度为2×1017 cm−3) 在偏向应力下慢慢发展.
- 陷积累遵循第三阶动力学,表明三颗粒子相互作用.
- 缓慢进化的陷表现出与之前报告的普遍陷一致的特征.
结论:
- 这些发现表明,半导体聚合物中的通用电子陷起源于三重碰撞过程.
- 特定的水-氧复合物 [2(H2O) -O2] 强烈地被认为是这些电子陷的起源.
- 这项研究为有机电子材料中无处不在的电子陷的分子起源提供了关键证据.
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