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Updated: Jul 2, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Published on: July 24, 2015

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在高克罗尼格 - 佩尼潜力极限中的一维石墨烯超级格子中的运输异位性

Tianlin Li1, Hanying Chen1, Kun Wang1

  • 1Department of Physics and Astronomy and Nebraska Center of Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA.

Physical review letters
|February 16, 2024
PubMed
概括

我们在石墨烯中展示了高克罗尼格 - 佩尼电位调制,使用铁电域门,使电子透镜成为可能. 这一突破为先进的电子超聚合和平带现象研究铺平了道路.

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