相关实验视频

Updated: Jul 2, 2025

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

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界面相互作用在二维极性SiGe/GeC异构结构中的关键作用

Safia Abdullah R Alharbi1,2, Ming Yu1

  • 1Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America.

Journal of physics. Condensed matter : an Institute of Physics journal
|February 16, 2024
PubMed
概括

这项研究探讨了SiGe/GeC的2D极垂直异构结构 (VHs). 界面电荷转移显著影响稳定性和电子性质,形成p-n异质连接,增强轻物质相互作用.

关键词:
2D极极异构结构的二维结构.内置的电场内置的电场界面互动是界面互动的形式.

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