使Ni-doped CeO245ppb

Rinku Paul1, Nikhilesh Maity2, Biswajit Das1

  • 1Materials Processing & Microsystems Laboratory, CSIR-Central Mechanical Engineering Research Institute, Durgapur 713209, India; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, Uttar Pradesh, India.

概括

这项研究开发了一种新型的配氧化传感器,用于在室温下检测氨 (NH3). 传感器可以实现超微量检测氨的水平,达到每十亿分之45 (ppb).

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