相关实验视频

Updated: May 5, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
11:13

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

9.4K

压缩结合的GaN/钻石接口的热传输和机械应力映射,用于垂直电源设备

William Delmas1, Amun Jarzembski1, Matthew Bahr1

  • 1Sandia National Laboratories, Albuquerque, New Mexico 87123, United States.

ACS applied materials & interfaces
|February 19, 2024
PubMed
概括

研究人员开发了一种新的室温压缩粘合方法,用于化 (GaN) 和钻石,改善垂直设备的热管理. 这种技术避免了复杂的表面激活,实现了高热边界导电性和低应力.

关键词:
拉曼·拉曼,拉曼·拉曼,拉曼·拉曼.直接结合的直接结合接口分析 接口分析压力就是压力,压力就是压力.热管理 热管理有更多的热反射.

更多相关视频

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.0K
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

8.6K

相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.7K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
919