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多功能HfAlO薄膜:铁电道连接点和电阻随机访问存储器

Yongjin Park¹, Jong-Ho Lee², Jung-Kyu Lee¹

¹Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea.

The Journal of chemical physics

|February 20, 2024

概括

本研究展示了如何在单个单元中切换铁电道结 (FTJ) 和电阻随机存储器 (RRAM). 这种双重功能为各种应用提供了灵活的内存解决方案.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
电气工程电气工程

背景情况:

铁电道连接 (FTJ) 和电阻随机访问存储器 (RRAM) 是有前途的非易失性存储器技术.
开发具有可调节特性的单细胞设备对于先进的计算至关重要.

研究的目的:

为了证明FTJ和RRAM功能在一个基于HfAlO的单个内存单元中的故意选择.
调查转换RRAM的潜在物理机制和内存性能.

主要方法:

在700°C下对HfAlO薄膜进行化,以获得稳定的FTJ特性.
控制的导电丝的形成,通过合规电流将FTJ转换为RRAM.
电流-电压 (I-V) 特性分析和1/f噪声测量.
使用NIST数据集对模式识别的模拟.

主要成果:

在700°C时炼的HfAlO片表现出稳定的FTJ行为,可以转换为RRAM.
与FTJ相比,转换后的RRAM显示出良好的内存性能,具有独特的传输机制.
在RRAM和FTJ中,在高阻力状态 (HRS) 和低阻力状态 (LRS) 之间,1/f噪声功率显著不同,趋势相反.
强化,抑郁和模式识别能力得到证实.

结论:

一个单一的HfAlO电池可以被设计为FTJ或RRAM设备.
了解不同的传输机制和噪声特征是优化设备性能的关键.
这项工作为具有可调节属性的多功能内存设备铺平了道路.

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