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Updated: Jul 2, 2025

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在单个纳米板Cu1.81S-CdS异构结构中,可见光诱导的孔转移

Chang Wang1, Zhaozhe Chen1, Si Xiao1

  • 1Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, China. sixiao@csu.edu.cn.

Nanoscale
|February 20, 2024
PubMed
概括

研究人员合成了硫化铜-硫化 (Cu1.81S-CdS) 异质连接. 过渡吸收光谱显示光生成孔从CdS转移到Cu1.81S,增强光催化.

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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