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Updated: Jul 2, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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电荷转移激子和在平面内横向的MoSe2-WSe2异构结构的方向光

Ning Li1, Na Zhang2, Jingang Wang2

  • 1School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China. mengtaosun@ustb.edu.cn.

Physical chemistry chemical physics : PCCP
|February 21, 2024
PubMed
概括

这项研究研究了MoSe2-WSe2异构结构的光学特性. 我们发现了不同的1光子和2光子吸收机制,揭示了定向光和潜在的物理原理.

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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